SiC for power market: from substrate to device, recent results and future progress.

SiC has superior efficiency to (Si) IGBT in the high voltage (600-3,300V) space and the high current (several hundred amperes) field that is in the spotlight in relation to EVs. SiC MOSFETS issues to be solved for the SiC market expansion are: substrate size, supply and defect density; device on resistance and trade off with short circuit and bipolar degradation; voltage surge and ringing linked to fast switching. In particular, the issues of reducing SiC MOSFET chip cost ($/amp) should be a top priority. A review of industry challenges and future development will be presented. We will also focus on how SiC substrates will enable to address those challenges through advanced substrates engineering.

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Speakers

Noriyuki Iwamuro Professor University of Tsukuba